diode rapidswitchingemittercontrolleddiode IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries datasheet industrialpowercontrol
2 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 rapidswitchingemittercontrolleddiode features: ?qualifiedaccordingtojedecfortargetapplications ?650vemittercontrolledtechnology ?fastrecovery ?softswitching ?lowreverserecoverycharge ?lowforwardvoltageandstableovertemperature ?175cjunctionoperatingtemperature ?easyparalleling ?pb-freeleadplating;rohscompliant applications: ?boostdiodeinccmpfc packagepindefinition: ?pin1-anode(a1) ?pin2andbackside-cathode(c) ?pin3-anode(a2) key performance and package parameters type v rrm i f v f , t vj =25c t vjmax marking package IDP30C65D2 650v 2x 15a 1.6v 175c c30ed2 pg-to220-3 a1 c1 c2 a2 a1 a2 c
3 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 table of contents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings (electrical parameters per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistances (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 a1 c1 c2 a2 a1 a2 c
4 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 maximum ratings (electrical parameters per diode) for optimum lifetime and reliability, infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. parameter symbol value unit repetitivepeakreversevoltage, t vj 3 25c v rrm 650 v diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 30.0 15.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 45.0 a diode surge non repetitive forward current t c =25c, t p =8.3ms,sinehalfwave i fsm 100.0 a powerdissipation t c =25c p tot 92.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermal resistances (per diode) parameter symbol conditions max. value unit characteristic diode thermal resistance, 1) junction - case r th(j-c) 1.63 k/w thermal resistance junction - ambient r th(j-a) 62 k/w electrical characteristics (per diode), at t vj = 25c, unless otherwise specified value min. typ. max. parameter symbol conditions unit static characteristic diode forward voltage v f i f =15.0a t vj =25c t vj =175c - - 1.60 1.65 2.20 - v reverse leakage current 2) i r v r =650v t vj =25c t vj =175c - - 4.0 400.0 40.0 - a electrical characteristic, at t vj = 25c, unless otherwise specified value min. typ. max. parameter symbol conditions unit dynamic characteristic internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax can be reached. 2) reverse leakage current per diode specified for operating conditions with zero voltage applied to the other diode. a1 c1 c2 a2 a1 a2 c
5 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 switching characteristics (per diode), inductive load value min. typ. max. parameter symbol conditions unit diode characteristic, at t vj = 25c diode reverse recovery time t rr - 31 - ns diode reverse recovery charge q rr - 0.20 - c diode peak reverse recovery current i rrm - 10.1 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -850 - a/s t vj =25c, v r =400v, i f =15.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch ikw50n65h5 diode reverse recovery time t rr - 42 - ns diode reverse recovery charge q rr - 0.16 - c diode peak reverse recovery current i rrm - 5.4 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -250 - a/s t vj =25c, v r =400v, i f =15.0a, di f /dt =400a/s, l s =30nh, c s =40pf, switch ikw50n65h5 switching characteristics (per diode), inductive load value min. typ. max. parameter symbol conditions unit diode characteristic, at t vj = 175c/125c diode reverse recovery time t rr - 32 - ns diode reverse recovery charge q rr - 0.29 - c diode peak reverse recovery current i rrm - 11.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -800 - a/s t vj =175c, v r =400v, i f =15.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch ikw50n65h5 diode reverse recovery time t rr - 42 - ns diode reverse recovery charge q rr - 0.22 - c diode peak reverse recovery current i rrm - 6.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -400 - a/s t vj =125c, v r =400v, i f =15.0a, di f /dt =400a/s, l s =30nh, c s =40pf, switch ikw50n65h5 a1 c1 c2 a2 a1 a2 c
6 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 figure 1. power dissipation per diode as a function of case temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 figure 2. diode transient thermal impedance per diode as a function of pulse width ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.033644 1.8e-5 2 0.33657 1.8e-4 3 0.63479 9.7e-4 4 0.58708 5.7e-3 5 0.041314 0.07842986 6 2.0e-3 2.0366 figure 3. typical reverse recovery time as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 0 500 1000 1500 2000 2500 3000 0 10 20 30 40 50 60 70 t j =25c, i f = 15a t j =175c, i f = 15a figure 4. typical reverse recovery charge per diode as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 0 500 1000 1500 2000 2500 3000 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 t j =25c, i f = 15a t j =175c, i f = 15a a1 c1 c2 a2 a1 a2 c
7 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 figure 5. typical peak reverse recovery current per diode as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rrm ,reverserecoverycurrent[a] 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 t j =25c, i f = 15a t j =175c, i f = 15a figure 6. typical diode peak rate of fall of rev. rec. current per diode as a function of diode current slope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 0 500 1000 1500 2000 2500 3000 -1500 -1250 -1000 -750 -500 -250 0 t j =25c, i f = 15a t j =175c, i f = 15a figure 7. typical diode forward current per diode as a function of forward voltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 t j =25c t j =175c figure 8. typical diode forward voltage as a function of junction temperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i f =7,5a i f =15a i f =30a a1 c1 c2 a2 a1 a2 c
8 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 a1 c1 c2 a2 a1 a2 c pg-to220-3
9 IDP30C65D2 emittercontrolleddioderapid2commoncathodeseries rev.2.1,2014-09-18 a1 c1 c2 a2 a1 a2 c pg-to220-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
10 IDP30C65D2 emitter controlled diode rapid 2 common cathode series rev. 2.1, 2014-09-18 revision history IDP30C65D2 previous revision revision date subjects (major changes since last revision) 2.1 2014-09-18 final data sheet a1 c1 c2 a2 a1 a2 c pg-to220-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
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